9.7 Semiconductor Devices

Depletion region and diffusion and drift currents at a p-n junction, rectification under forward and reverse bias, and transistors as amplifiers and switches.

University Physics Volume 3, 9.7 Semiconductor Devices

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6 exercises

9.7 Exercise 1

How does the magnitude of the forward bias current compare with the reverse bias current?

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9.7 Exercise 3

When p- and n-type materials are joined, why does the depletion layer not grow indefinitely?

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9.7 Exercise 5

Why does the reverse bias configuration lead to a very small current?

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9.7 Exercise 7

Explain how an audio amplifier works, using the transistor concept.

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9.7 Exercise 9

A p-n diode has a reverse saturation current $1.44 \times 10^{−8} \text{A}$ . It is forward biased so that it has a current of $6.78 \times 10^{−1} \text{A}$ moving through it. What bias voltage is being applied if the temperature is 300 K?

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9.7 Exercise 11

Applying the positive end of a battery to the p-side and the negative end to the n-side of a p-n junction, the measured current is $8.76 \times 10^{−1} \text{A}$ . Reversing this polarity give a reverse saturation current of $4.41 \times 10^{−8} \text{A}$ . What is the temperature if the bias voltage is 1.2 V?

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